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詳細介紹
霍爾效應傳感器可為科學研究、醫(yī)療健康、航空航天和工業(yè)應用提供高性能的模擬磁場測量。
Figure 1. sensor on test assembly
產品特點:
• 超高分辨率
• 超低噪音性能
• 可在極低溫條件下使用
• 大動態(tài)范圍
• 高線性
• 超低功耗運行
簡述:
利用石墨烯固有的低噪聲特性，無需信號調節(jié)即可提供出色的場分辨率。石墨烯的二維性質 很大程度地降低了平面霍爾效應，并且石墨烯的穩(wěn)定性和電子 遷移率提供了 *的溫度和磁場工作范圍。
應用包括：
• 精密磁場測量
• 場梯度和邊緣場的精確映射
• 高精度位置，旋轉和速度感應
• 低溫下的超低功率場測量
優(yōu)點:
可滿足各種應用需求?？梢岳玫膬?yōu)點包括：
• 可以在 < 1.8 K - 353 K的溫度下運行
• 在大磁場范圍(> 9 T)內ppb磁場變化的分辨率
• 低至 10 nA的工作電流，節(jié)省了功率，僅產生5 pW的散熱
• 平面霍爾效應可忽略不計，有助于精確地確定儀器的擺放位置場方向
需要特定要求，請聯(lián)系我們info<info>
性能特點:
Parameter | Symbol | Value (typical) | Unit | Notes |
Maximum operating temperature range | T | 1.8 to 353 | K | Performance guaranteed within this range. Operation <1.8 K is possible |
Measurable field range | B | >+/- 9 | T | See Fig.2. At 1.8K, 0-9 T is possible with reduced linearity |
Open Circuit Sensitivity | S | 1100 | V/AT | @ room temperature. see Fig 3 for change with temperature |
Open Circuit Hall Voltage | VH | 110 | mV | I=IN ａnd B=1 T, increases with reducing temperature |
Spectral Noise Density |
SDT | 7 |
µ??⁄√???? | 10 Hz, 2 VRMS (equivalent to I=IN) |
0.7 | 1 kHz, 2 VRMS (equivalent to I=IN) | |||
0.3 | 10 kHz, 2 VRMS (equivalent to I=IN) | |||
0.07 | 100 kHz, 2 VRMS (equivalent to I=IN) | |||
Resolution, based on SDT on a 1 T field |
RSND | 7 |
ppm | 10 Hz, 2 VRMS (equivalent to I=IN) |
0.7 | 1 kHz, 2 VRMS (equivalent to I=IN) | |||
0.3 | 10 kHz, 2 VRMS (equivalent to I=IN) | |||
0.07 | 100 kHz, 2 VRMS (equivalent to I=IN) | |||
RMS noise | ??T2? | 40 | ?T | 0.1 – 10 Hz, 2 VRMS (equivalent to I=IN) |
28 | 10 – 100 kHz, 2 VRMS (equivalent to I=IN) | |||
Linearity of Hall Voltage % of full scale | FL | <0.5 | % | -1 to 1 T. See Fig 2 for full 0-9 T range |
Corrected Linearity |
| <0.01 | % | -1 to 1 T, after 3rd order correction |
Planar Hall Effect | HPL | <10 | µT | At I=IN , 1 T |
Nominal Supply Current | IN | 0.1 | mA | Can be operated down to I=10 nA |
Maximum Supply Current | Imax | 1 | mA |
|
Supply Side Internal Resistance | RIN | 22 | k? | B=0 T |
Hall Side Internal Resistance | ROUT | 22 | k? | B=0 T |
Offset Voltage |
VR0 | 8 | mV | Typical offset voltage at I=IN ａnd B=0 T |
0.6 | mV | Min offset voltage at I=IN ａnd B=0 T | ||
34 | mV | Max offset voltage at I=IN ａnd B=0 T | ||
Temperature Coefficient of Sensitivity | TCS | -4.7 | V/AT/K | @ room temperature, IN |
高場和低溫性能
Figure 2. Hall Voltage output at 295 K, from 0 to 9 T
Figure 3. Sensitivity as a function of temperature from 1.8 K to 300 K. Measured at 1T.
封裝信息
有效面積：1.3 x 1.3 mm 位于封裝的中心封裝類型: 20-pin LCC, 陶瓷,無鎳, 表面貼焊。
| Pin | Notes |
VIN+ | 1 or 11 | Input voltage can be supplied with either polarity |
VIN- | 11 or 1 | |
VH+ | 6 or 16 | Hall voltage polarity will depend on VIN polarity ａnd field polarity |
VH- | 16 or 6 |
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